METHOD OF MAKING MASKS Russian patent published in 1996 - IPC

FIELD: microelectronic device technology. SUBSTANCE: resistive material film is irradiated by radiation flows of flows of particles. After that the film is subjected to etching. Before being irradiated, resistive film is applied onto substrate and stretched. After radiation and before etching, tension is reduced or removed. Before irradiation, elastic resistive layer may be applied to the film. Resistive layer may be applied in form of spatially separated islands. Due to compression of the film, patterns and thickness of the film at reduction of tension appear to be shorter, than at initial position. So, application of complicated and expensive optical and electro-optical projection and focusing systems with utmost parameters is not necessary. EFFECT: simplification. 4 cl, 1 dwg