FIELD: technology of semiconductor devices at manufacture of various integrated sensors and transducers, photo- and optoelectronic devices, using layers of porous silicon and silicon-silicon contacts. SUBSTANCE: a layer of porous silicon is produced on silicon substrate of electronic conductance by anodization. A layer of aluminium is applied over the layer of porous silicon and burnt in an inert medium at 300 to 350 C for 10 to 15 min. EFFECT: facilitated procedure.
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