FIELD: electronics. SUBSTANCE: invention refers to manufacture of sensitive element of semiconductor gas sensor based on porous silicon. Porous layer of sensitive element is formed on high-resistance silicon substrate of p type of conductance by treatment in HF-containing electrolyte. Porous layer is then tinsed in boiling deionized water, dried and dry etching is conducted in plasma of high-frequency discharge in gas atmosphere with partial pressure of component (Pa):freon-14 40-42; oxygen 21-25; argon 1-5 and density of discharge power 0.05-0.5 W/cu.cm for the course of 1.5-15.0 min. Later metal is deposited through contact mask. EFFECT: increased sensitivity of element. 1 dwg
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