METHOD OF MAKING SOLAR PHOTOELECTRIC CONVERTER Russian patent published in 2011 - IPC H01L31/18 B82B3/00 

FIELD: physics.

SUBSTANCE: method of making solar photoelectric converter involves applying a dielectric mask onto the peripheral region of an n-GaSb substrate and forming on areas of the front surface of the substrate which are not protected by the dielectric mask a heavily doped layer with p-conductivity type via diffusion of zinc from a gas phase at temperature 450-490°C. The layer of p-GaSb formed as a result of diffusion is removed from the back side of the substrate and a rear contact is formed. The front surface of the substrate is cleaned via ion-beam etching at a depth of 5-30 nm and a photoresist mask is formed thereon. An ohmic contact is formed through successive deposition of an adhesion layer of titanium with thickness of 5-30 nm and a barrier layer of platinum with thickness of 20-100 nm via magnetron sputtering and a conducting layer of gold or silver via thermal evaporation. The photoresist mask is removed. The structure undergoes separate etching into separate photocells and an antireflection coating is applied. The invention enables to make a photoelectric converter with a system for metal coating the front layers of p-GaSb, in which there is high reproducibility of forming an ohmic contact with low contact resistance and a shallow-lying planar metal-semiconductor boundary surface which, in the end, increases the percentage output of suitable photoelectric converters. Also, the disclosed metal coating system avoids the need for additional deepening of the p-n-junction in contact regions of photoelectric converters.

EFFECT: simpler technology of manufacturing the device owing to formation of a multilayer ohmic contact with a large thickness in a single sputtering process.

9 cl, 5 dwg