DEVICE FOR GROWING OF SINGLE CRYSTALS Russian patent published in 1996 - IPC

Abstract RU 2065512 C1

FIELD: production of semiconductors. SUBSTANCE: device for growing of single crystals by Czochalsky method has melting chamber, crucible, heater, seed holder on flexible suspension and vibration damping unit made in form of bell-crank. One arm of bell-crank is installed in the upper part of chamber for turning round the axis square to growing axis and with coinciding of slot with axis of flexible suspension. Besides, vibration damping unit has fixing unit. Fixing member is made in form of spring-loaded bent lever. EFFECT: higher efficiency. 2 cl, 4 dwg

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RU 2 065 512 C1

Authors

Kutsenogij L.K.

Buzunov A.I.

Petrov S.I.

Kitaev A.Ja.

Dates

1996-08-20—Published

1992-06-30—Filed