METHOD FOR GROWING OF HOLLOW CYLINDRICAL SINGLE CRYSTALS OF SILICON BASED ON CHOKHRALSKY METHOD AND DEVICE FOR ITS REALISATION Russian patent published in 2009 - IPC C30B15/00 C30B29/06 C30B29/66 

FIELD: technological processes.

SUBSTANCE: invention is related to the field of electronic engineering, in particular to technology for growth of profiled single-crystals of silicon in the form of hollow thin-walled cylinders to make epitaxial cylindrical (non-planar) structures of strong power semiconductor instruments. Method consists in the fact that vacuum chamber is sealed and vacuumised with thermal unit and hollow cylindrical seeding agent of silicon single crystal located in it, inertial gas with dew point of at least -70°C is supplied in it during the whole process of hollow cylindrical single crystals growth, heater is used to heat the thermal unit equipped with quartz melting crucible filled with silicon, afterwards quartz melting crucible is vertically displaced until its bottom is located in zone of thermal unit maximum temperature, and silicon fill is melted, then lower end of hollow cylindrical seeding agent of silicon single crystal is melted by means of its submersion into silicon melt located in quartz melting crucible, afterwards quartz melting crucible and hollow cylindrical seeding agent of silicon single crystal in contact with silicon melt are rotated in the same direction and with the same rotation frequency, at that rotary hollow cylindrical seeding agent of silicon single crystal is lifted up with speed that provides for growth of hollow cylindrical single crystal of silicon on its lower end, to complete expenditure of silicon melt in quartz melting crucible, at that in process of growing the following conditions are fulfilled: q_int.=q_ext., where q_int. is specific thermal flow directed to internal surface of hollow cylindrical silicon single crystal in process of its growth in crystallisation plane, W/m², q_ext. is specific thermal flow directed at external side surface of hollow cylindrical single crystal of silicon in process of its growth in crystallisation plane, W/m², and convective flows of silicon melt are directed from center of quartz melting crucible bottom vertically upwards along axis of hollow cylindrical seeding agent of silicon single crystal. Design of device for growth of hollow cylindrical silicon single crystals is described.

EFFECT: formation of section of profile hollow cylindrical silicon single crystals with uniform distribution of their electrophysical and structural parametres: diametre of 20-50 mm with continuous thickness of wall of 3-5 mm and low density of dislocation in structure - not more than 10³-10⁴ cm^-2, specific electric resistance of 0.02 Ohm·cm with dispersion of not more than 6%, life time of unbalanced charge carrier of not more than 1 mcs.

4 cl, 1 dwg