METHOD OF GROWING OF MONOCRYSTALS Russian patent published in 1996 - IPC

FIELD: growing of monocrystals. SUBSTANCE: invention relates to technology of manufacture of monocrystalline materials used in various branches of industry. Proposed method of growing of monocrystals is realized by extraction of oriented seed from feeding medium through shape former to put crystallization front into shape projection on plane perpendicular to direction of extraction of crystal coincides with section of simple shape of growth of crystal in this plane. Apart from this crystallization front is given shape by making holes in shape former matching section of simple shape of growth of crystal in plane perpendicular to direction of extraction of crystal. Thermal field is created in region of crystallization front which isothermic lines match in shape section of simple shape of growth of crystals in plane perpendicular to direction of extraction of crystal. EFFECT: increased quality of grown crystals, specifically of their optical homogeneity, improved distribution of specially injected or natural additives and properties caused by anisotropy. 3 cl, 2 dwg