AMPLIFIER Russian patent published in 1996 - IPC

FIELD: radioelectronics; electronic engineering. SUBSTANCE: amplifier is made of two single-stage FET-based amplifiers. Each FET-based amplifier has load circuit, bias circuit, power source. Common bus of power source is connected to earth and to source of transistor through resistor and capacitor connected in parallel to the resistor. The second bus of power source is connected with drain of FET through the resistor. Resistor is connected between gate of transistor and common bus of power source. Described amplifier has two amplifiers described above with common power source. Gates of transistors of the first and the second amplifiers are integrated. One bus of input signal bus is connected to gates of transistors through a capacitor being common for both amplifiers. The second bus is connected with common bus of power source. Output of amplifier is made between drains of transistors. Two FETs are used as amplifying members, which have gates in Schottky-barriers or p-n junctions with different cut-off voltages of channels. For the other variant, two MOS transistors may be used with different threshold voltages. EFFECT: improved efficiency of operation. 3 cl, 4 dwg