INTEGRATED-CIRCUIT FIELD-EFFECT TRANSISTOR USING DIMENSIONAL ENERGY QUANTIZATION Russian patent published in 2005 - IPC

FIELD: computer engineering and integrated-circuit electronics.

SUBSTANCE: proposed integrated-circuit field-effect transistor designed for use in very large-scale integrated circuits incorporates provision for high mobility of electrons in channel at their high concentration, as well as for ensuring pentode output characteristics of short-channel transistor enabling the development of integrated-circuit logic gates around it thereby implementing three processing-compatible alternatives of transistors having different transfer current-voltage characteristics. Newly introduced in proposed integrated-circuit field-effect transistor that has semi-insulating GaAs substrate, semiconductor GaAs layer of inherent polarity of conductivity, semiconductor AlGaAs layers, metal gate, semiconductor drain and source layers of second polarity of conductivity, drain and source metal contacts, semiconductor drain and source layers of second polarity of conductivity are semiconductor GaAs layer of inherent polarity of conductivity, semiconductor AlGaAs layers of inherent polarity of conductivity, semiconductor AlGaAs layer of second polarity of conductivity, highly doped semiconductor gate region of second polarity of conductivity, all enabling use of dimensional energy quantization and energy layer displacement from quantum well.

EFFECT: enhanced speed, reduced rate of degradation of transistor characteristics, and enhanced effectiveness of its use in integrated circuits.

1 cl, 8 dwg