THIN-FILM STRUCTURE Russian patent published in 1997 - IPC

FIELD: radio electronics, can be used in microwave devices made in the form of thin-film structures. SUBSTANCE: thin-film structure uses substrate 2 that carries thin-film resistors, capacitors and active elements; the lower surface of substrate 1 is bonded, substrate 1 has through holes 2 whose walls are bonded and serve as one of the plates of capacitors 3; mentioned bonded layer 5 accommodates a layer of dielectric 4, applied onto which is another bonded layer 5 serving as the other plate of capacitor 3 and continuation of lower bonded layer 5 of substrate 1. EFFECT: enhanced adaptability to manufacture. 3 dwg