FIELD: semiconductor electronics, design of transistor wide-band microassemblies with internal matching circuits. SUBSTANCE: SHF transistor microassembly includes semiconductor crystal, crystal of MIS capacitor with built-in resistor, family of wire jumpers. Thin-film temperature-sensitive resistor which first electrode is connected by metallization to planar electrode of built-in resistor and which second electrode is connected by wire jumpers to elements of transistor structure and zero potential bus is additionally formed on crystal of MIS capacitor. EFFECT: increased and stabilized output energy parameters in SHF band. 2 dwg , 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| SHF TRANSISTOR MICROASSEMBLY | 1992 |
|
RU2101803C1 |
| HIGH-POWER MICROWAVE METAL-INSULATOR- SEMICONDUCTOR TRANSISTOR | 2001 |
|
RU2195747C1 |
| MICROWAVE WIDE-BAND POWER TRANSISTOR | 0 |
|
SU724000A1 |
| HIGH-POWER RF AND MICROWAVE TRANSISTOR | 2009 |
|
RU2403650C1 |
| POWERFUL HF- AND MICROWAVE TRANSISTOR STRUCTURE | 2020 |
|
RU2743675C1 |
| HIGH-POWER HIGH-FREQUENCY TRANSISTOR | 1975 |
|
SU1424656A1 |
| POWERFUL HF- AND MF-TRANSISTOR STRUCTURE | 2020 |
|
RU2743674C1 |
| HIGH-POWER BROADBAND HIGH-FREQUENCY AND MICROWAVE TRANSISTOR | 2001 |
|
RU2192692C1 |
| POWERFUL HF- AND MICROWAVE TRANSISTOR STRUCTURE | 2020 |
|
RU2743673C1 |
| PROCESS OF MANUFACTURE OF SEMICONDUCTOR COMPONENTS OF SHF HIGH-POWER TRANSISTOR MICROASSEMBLIES | 1991 |
|
RU2017271C1 |
