SHF TRANSISTOR MICROASSEMBLY Russian patent published in 1998 - IPC

FIELD: semiconductor electronics, design of transistor wide-band microassemblies with internal matching circuits. SUBSTANCE: SHF transistor microassembly includes semiconductor crystal, crystal of MIS capacitor with built-in resistor, family of wire jumpers. Thin-film temperature-sensitive resistor which first electrode is connected by metallization to planar electrode of built-in resistor and which second electrode is connected by wire jumpers to elements of transistor structure and zero potential bus is additionally formed on crystal of MIS capacitor. EFFECT: increased and stabilized output energy parameters in SHF band. 2 dwg , 1 tbl