MICROWAVE HYBRID INTEGRATED CIRCUIT Russian patent published in 2006 - IPC H01L27/13 H05K1/16 

FIELD: electronic engineering.

SUBSTANCE: proposed microwave hybrid integrated circuit has insulating substrate carrying topological metal layout on its face, film capacitor whose top metal plate is incorporated in topological metal layout and bottom one is metal surface covering hole in insulating substrate brought out to face of the latter; hole is disposed directly under top metal plate of film capacitor; another hole is provided in dielectric film of film capacitor above its bottom plate and beyond area of top metal plate for direct connection of bottom metal plate to topological metal layout through this hole.

EFFECT: reduced size and mass, facilitated manufacture, enlarged functional capabilities at same power characteristics due to reduced space requirement for integrated circuit parts and connections.

6 cl, 2 dwg