THIN-FILM STRUCTURE Russian patent published in 1996 - IPC

Abstract RU 2067361 C1

FIELD: microwave devices, in particular design and manufacturing off thin-film structures. SUBSTANCE: resistors are located between first conducting and dielectric layers. Dielectric layer provides possibility to exclude interaction between resistive material and oxygen in air. EFFECT: stability of thin-film resistors is increased by factor of ten, increased stability of thin film structure. 2 dwg

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RU 2 067 361 C1

Authors

Temnov A.M.

Temnova S.L.

Krutov A.V.

Dates

1996-09-27Published

1982-08-09Filed