HYBRID MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2004 - IPC

FIELD: electronic engineering.

SUBSTANCE: proposed hybrid microwave integrated circuit has insulating substrate with layout pattern sputtered on its face end and ground shield sputtered on its opposite end, as well as film capacitor incorporated in layout pattern; bottom plate of film capacitor is made in the form of hole filled with metal connecting bottom plate to sputtered ground shield. Surface roughness of capacitor bottom plate is 0.02 - 0.08 m and thickness of capacitor insulating film is 0.05 - 5 m; size of capacitor insulating film is greater than that of plates, as viewed from top, by 5 - 400 m.

EFFECT: improved mass and size characteristics, facilitated manufacture, reduced cost.

6 cl, 1 dwg