THIN-STRUCTURE Russian patent published in 1997 - IPC

FIELD: designing and practice of production of thin-film structures. SUBSTANCE: in thin-film structure, containing substrate 1 with resistors 10 and capacitors 9 in the form of first conducting layer 2, dielectric layer 3, second conducting layer 2 and resistive layer 5, buffer layer 4 of metal with a high conductance is positioned locally in the points of formation of capacitors 9 between the dielectric (3) and resistive (5) layers, and dielectric layer 3 is made of material with a low microwave loss. EFFECT: enhanced adaptability to manufacture. 2 dwg