DEVICE FOR DETERMINING ELECTROPHYSICAL PARAMETERS OF SEMICONDUCTOR PLATES Russian patent published in 1998 - IPC

FIELD: semiconductor engineering. SUBSTANCE: device has heating stage of conducting material for heating and/or cooling semiconductor plate mounted on it, semiconductor plate temperature sensor, and signal analyzer recording amplitude-time characteristics of signal; in addition, it is provided with electromagnetic radiation source made for varying radiation with time according to pulse and periodic dependence; radiation energy quantum of source is higher than oscillation threshold of free carrier in plate semiconductor; it also has planar transparent conducting electrode and high-resistance instrumentation amplifier; electromagnetic radiation source is placed above semiconductor plate and made for its irradiation through transparent electrode placed in parallel with semiconductor plate; transparent insulating layer is provided between semiconductor plate and transparent electrode; the latter is connected to input of high-resistance instrumentation amplifier and output of this amplifier is connected to signal analyzer. EFFECT: improved design. 2 cl, 1 dwg