METHOD FOR CLEARING SURFACE OF SEMICONDUCTOR PLATES Russian patent published in 1997 - IPC

Abstract RU 2080687 C1

FIELD: microelectronics. SUBSTANCE: method involves immersion of semiconductor plates in water solution of sulfate maleic anhydride which concentration is 0.1-10 percents by weight and subsequent processing in this solution for 10-15 minutes under temperature of 60-80 C. EFFECT: increased efficiency of clearing, non-toxic processing, environment protection, increased good-to- bad ratio.

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RU 2 080 687 C1

Authors

Derjugin V.N.

Galaev A.A.

Komarova N.V.

Korovin S.K.

Panaeva S.A.

Usov N.N.

Dates

1997-05-27Published

1995-06-07Filed