PROCESS OF MANUFACTURE OF HIGH-POWER SHF FIELD-EFFECT TRANSISTORS WITH SCHOTTKY BARRIER Russian patent published in 2004 - IPC

FIELD: microelectronics, manufacture of discrete devices and integrated circuits. SUBSTANCE: in compliance with process of manufacture of high-power SHF field-effect transistors with Schottky barrier n⁺-n structure of GaAs is formed by ion doping of semi- insulating substrate with subsequent high-temperature firing. Dielectric film transparent to penetration of hydrogen is deposited on surface of structure after high-temperature firing, structure is treated in atomic hydrogen at temperature 100-200 C in the course of 20-120 min, dielectric film is removed and low-temperature firing at 400-475 C is conducted in the course of 5-20 min. Dielectric film is produced from SiO with thickness d=3-15 nm. EFFECT: enhanced operational power and raised breakdown voltage of drain. 2 cl, 2 tbl