QUALITY CONTROL PROCEDURE IN CHEMICAL CLEANING OF SURFACE OF SEMICONDUCTOR SILICON PLATES IN SOLUTIONS WITH pH>7 Russian patent published in 2009 - IPC H01L21/66 

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to electronics and can be used during the manufacture of semiconductor appliances and integrated circuit. Quality control procedure in chemical cleaning of the surface of semiconductor silicon plates in solution with pH>7 includes manufacturing a control silicon plate with a measured surface electric resistance in the doped zone, chemical cleaning of the control place in a solution pH>7 and determining the changes in the surface electrical resistance in the doped zone of the control plate. The changes of the surface electric resistance must be 1.0% - 15% from the initial value. The method makes it possible to evaluate the degree of action of the solution on the doped zone of the silicone based on established laws governing the change in surface resistance. In combination with the existing methods of control this method will make it possible to carry out the correct selection of the process of chemical cleaning and regimes of carrying it out at any stage of making the integrated circuit.

EFFECT: possibility of evaluating the degree of action of the solution on the doped zone of the silicone based on established laws governing the change in surface resistance.

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