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2 081 948

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C1

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IPC

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Application

94044183/25, 1994-12-14

(22)

Actual filing date

1994-12-14

(45)

Published

1997-06-20

(72)

Inventor

Zhvirbljanskij V.Ju.Sporykhin R.I.Eljutin A.V.Zolotova G.A.

(73)

Holder

Gosudarstvennyj Nauchno-Issledovatel'Skij I Proektnyj Institut Redkometallicheskoj Promyshlennosti

DEVICE FOR GROWING MONOCRYSTALS Russian patent published in 1997 - IPC

Abstract RU 2081948 C1

FIELD: growing of crystals. SUBSTANCE: invention is related to a procedure of growing crystals using replenishment of melt. Device contains growing cell, crucible for melt with spacer ring, heater, and means for replenishing melt. Heater has annular prominence located above the melt. Heat transfer to melt in the grain input zone is effected directly through radiation. EFFECT: improved quality of crystals due to increased symmetry of heat field in melt. 2 cl, 1 dwg

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RU 2 081 948 C1

Authors

Zhvirbljanskij V.Ju.

Sporykhin R.I.

Eljutin A.V.

Zolotova G.A.

Dates

1997-06-20—Published

1994-12-14—Filed

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