DEVICE FOR GROWING SILICON SINGLE CRYSTALS Russian patent published in 1997 - IPC

FIELD: growing the crystals. SUBSTANCE: device has growing chamber, crucible for melt, heater with current leads and branch pipe for evacuation of chamber. Current leads are secured in chamber side wall. Heater is connected with current leads by means of graphite rod which has stop screw. Angle between axes of current lead and branch pipe is not less 30 deg. Excluded getting of melt onto current leads and reduced amount of monoxide settled on current leads provided for reliable electric contact of heater with current leads. EFFECT: higher safety in servicing the device, increased operating reliability, and reduced heat losses. 2 cl, 3 dwg