DEVICE FOR GROWTH OF SILICON SINGLE CRYSTALS Russian patent published in 2001 - IPC

FIELD: equipment for growing of large silicon single crystals by Chokhralsky method. SUBSTANCE: device has an airtight chamber with upper and lower parts. Crucible with melt is located in chamber lower part. Seed holder is located in chamber upper part and connected with drives of rotary and transition motions. Chamber upper part has a projection where washer is freely installed. Means for supporting of crystal has levers with supports and grips. Supports accommodate guides. Attached to lower parts of guides is a ring engageable with grips and plate is attached to upper part. During growth of single crystal, seed holder moves upward. Plate comes in contact with the seed holder. Guides start moving upward, and ring frees grips. The latter pickup the crystal and hold it up to end of growth process. The device has simple structural members ensuring reliable support of crystal and process cleanness. EFFECT: simplified design, higher reliability of device and cleanness of process. 2 dwg