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2 083 514

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C1

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IPC

(21) (22)

Application

95115944/03, 1995-09-12

(22)

Actual filing date

1995-09-12

(45)

Published

1997-07-10

(72)

Inventor

Koshelev N.I.Ermolaeva A.I.

(73)

Holder

Moskovskij Gosudarstvennyj Institut Ehlektronnoj Tekhniki

GLASS FOR STRUCTURES OF SILICON-ON-INSULATOR TYPE Russian patent published in 1997 - IPC

Abstract RU 2083514 C1

FIELD: microelectronic technique. SUBSTANCE: invention concerns dielectric insulation of active elements of silicon of integrated microcircuits and creation of silicon-on-insulator structures with dielectric insulation. Glass for such structures is composed of (in wt % of oxide): silicon, 57-70; aluminium, 10-20; barium, 9-25; strontium, 1- 12; zirconium, 0.1-2; calcium, 1-6; and germanium, 1-6. Dielectric permittivity of glass at frequency 106 Hz is 8-9. EFFECT: improved insulation quality.

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RU 2 083 514 C1

Authors

Koshelev N.I.

Ermolaeva A.I.

Dates

1997-07-10—Published

1995-09-12—Filed

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