FIELD: microelectronics. SUBSTANCE: method of manufacturing silicon structure with dielectric insulation of components involves the steps of: carrying out the mechanical working of an initial single-crystal and support silicon wafers, forming a relief and burriend layer in the initial single-crystal silicon wafer, forming an indulating dielectric film, filling the relief with a polysilicon layer, carrying out the mechanical working of the polysilicon layer for obtaining a planar surface, applying a layer of powder-like glassy dielectric onto the surface to be soldered, onto each soldered surface with thickness of no more than 10 mcm. The dielectric thermal expansion coefficient is matched with the same of silicon synthesized in plasma with maximum particle size of no more than 0.5 mcm. The initial and support wafers having been soldered under pressure of (5-50)10-2 Pa, the initial wafer is removed till obtaining single crystall insulated regions of a given thickness. EFFECT: enhanced yield. 3 dwg
