METHOD FOR MANUFACTURING OF SEMICONDUCTOR TEMPERATURE-SENSITIVE RESISTOR Russian patent published in 1997 - IPC

FIELD: electric engineering. SUBSTANCE: method involves development of temperature- sensitive element from single crystal of synthetic semiconductor diamond, development of thin insulating layer of synthetic dielectric diamond using said element as seed, generation of holes in thin insulating layer, connection of electric terminals to semiconductor diamond through said holes so that high-temperature conducting contacts are shaped. In addition heater which is developed on layer of synthetic dielectric diamond is designed as resistive layer of semiconductor depleted diamond with electric terminals on its outer edges and has holes in opposite to holes in layer of dielectric diamond. EFFECT: increased functional capabilities. 6 cl, 4 dwg