FIELD: methods for growing single crystals of gallium-containing oxide compounds, in particular, lanthanum-gallium silicate. SUBSTANCE: for growing single crystals of lanthanum-gallium silicate by solid-phase synthesis, mixture is prepared by blending oxides of lanthanum, gallium and silicon. In so doing gallium oxide is taken in excess with respect to stoichiometric composition. Mixture is melted at low pressure of 0.6-0.95 atm. Crystals are grown on preliminarily oriented seed. Provision of growing single crystals of lanthanum-gallium silicate which do not contain dissipating centers and blocks and suitable for manufacture of devices on volume and surface acoustic waves. EFFECT: higher efficiency. 1 tbl
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