METHOD OF MAKING DIAMOND SCHOTTKY DIODE Russian patent published in 2024 - IPC H01L21/329 H01L29/872 

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering and is used in a method for manufacturing a diamond Schottky diode. Method includes preparation by polishing of substrate 2 from synthetic monocrystal 1 of diamond doped with boron, chemical deposition from gas phase on one side of polished substrate 2 of diamond film with low degree of doping with boron, forming an anode on the reverse side of polished substrate 2 in the form of an ohmic contact and forming a cathode with a Schottky contact on the diamond film. Substrate 2 used is a diamond plate cut from growth sectors {001} and/or {113} of diamond monocrystal with cuboctahedral habit, grown by temperature gradient method at high pressure and temperature in high-pressure apparatus of "toroid" type with average level of doping with boron in range of 10¹⁷ to 10¹⁹ atom/cm³ and degree of compensation of acceptor impurities of not more than 1 %.

EFFECT: reduction of voltage drop on boron-doped substrate 2 when direct current flows through the diode.

1 cl, 2 dwg