SEMICONDUCTOR PRESSURE CONVERTER WITH THERMAL COMPENSATION CIRCUIT Russian patent published in 1997 - IPC

Abstract RU 2084846 C1

FIELD: measurement technology, measurement of pressure under conditions of exposure to nonstationary ambient temperature. SUBSTANCE: proposed semiconductor pressure converter has tensobridge, thermal compensation circuit based on transistor and two thin-film resistors, current-limiting and thin-film resistors and two trimming resistors. EFFECT: high accuracy of measurement, total interchangeability of pressure converters of simple and reliable make on base of integrated and thin-film technology. 1 dwg

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RU 2 084 846 C1

Authors

Tsivinskij Aleksandr Viktorovich

Odintsov Andrej Nikolaevich

Dates

1997-07-20—Published

1992-05-14—Filed