SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 2015 - IPC G01L9/00 

FIELD: measurement technology.

SUBSTANCE: invention refers to measurement equipment, particularly to pressure transducers for application in various research and technology spheres related to medium pressure measurement affected by unsteady temperature of measured medium. Semiconductor pressure transducer with thermal compensation circuit includes semiconductor crystal cut in a plate form. The plate features thin-wall membrane where four resistance strain gauges of measurement bridge circuit are formed together with two thin-film resistors connected with their first outputs to transistor base and with their second outputs to transistor emitter and collector, respectively. Thin-film resistors are made of material with low temperature resistance coefficient. Additional resistance strain gauge bridge and resistor with high temperature resistance coefficient with outputs separated from the common circuit are positioned on semiconductor crystal outside of thin-wall membrane. Semiconductor crystal is positioned on a prop out of glass substrate and hollow cylindrical prop with external thread, made out of materials with the same thermal expansion coefficients.

EFFECT: significant extension of work temperature range.

3 dwg