PRESSURE SENSOR BASED ON TENSORESISTOR THIN-FILM NANO- AND MICRO-ELECTROMECHANICAL SYSTEM Russian patent published in 2010 - IPC G01L9/04 B82B3/00 

FIELD: physics.

SUBSTANCE: pressure sensor based on a tensoresistor thin-film nano- and micro-electromechanical system (NMEMS) has a case inside of which there is a NMEMS, consisting of an elastic member - membrane which is rigidly sealed on a contour on which there is a heterogeneous structure of thin-film materials, sealing terminal block and connecting leads. Tensoresistors formed in the heterogeneous structure on a circular arc and in a radial direction consist of identical tensoelements in form of squares connected by thin-film jumpers connected into a measurement bridge. The centres of the circular and radial tensoelements lie on a circle whose radius r₀ is defined from the corresponding relationship.

EFFECT: more accurate measurement of pressure under thermal shock conditions owing to improved linearity and reduction of the effect of temperature deformations of the membrane on the output signal of the measurement bridge.

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