STRAIN GAUGE PRESSURE SENSOR ON BASIS OF THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2010 - IPC G01L9/04 B82B3/00 

FIELD: instrument making.

SUBSTANCE: strain gauge pressure sensor on the basis of thin-film nano- and microelectromechanical system (NandMEMS) comprises body, NandMEMS installed in it and consisting of elastic element-membrane rigidly embedded along contour, heterogeneous structure formed on it from thin films of materials, sealing contact shoe, connector conductors. In sealing contact shoe strain gauges formed in heterogeneous structure and arranged along arc of circumference and in radial direction consist of identical strain elements in the form of squares connected by thin-film links included into measurement bridge. Centres of circumferential and radial strain gauge elements are arranged along circumference, radius r of which is determined by the following ratio r=0.707 r_m, where r_m - radius of membrane.

EFFECT: increased accuracy of pressure measurement under conditions of thermal shock effect due to improvement of linearity and reduction of membrane temperature deformations effect at output signal of measurement bridge.

10 dwg