METHOD OF ION IMPLANTATION Russian patent published in 1997 - IPC

Abstract RU 2087586 C1

FIELD: application of coatings. SUBSTANCE: ions are implanted into target to the depth exceeding projected ions' track with simultaneously bombarding target by electrons from electroarc evaporator plasma with positive potential on target. EFFECT: improved procedure. 1 dwg

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RU 2 087 586 C1

Authors

Budilov V.V.

Kirev R.M.

Shekhtman S.R.

Dates

1997-08-20Published

1994-04-08Filed