FIELD: machine engineering, namely manufacture of articles for electronic industry branch by ion implantation process. SUBSTANCE: method comprises steps of implanting ions into treated surface by depth exceeding projected path of ions; simultaneously applying to treated surface positive potential in order to irradiate it in outer electric field with electrons while heating target; realizing diffusion annealing of said surface; using heated cathode as source of thermal electron emission in order to provide directed motion of electrons towards target at irradiation. Target serves as anode of thermal electron emission source. It allows to provide treated surface without foreign inclusions on it. EFFECT: enhanced quality of treated surface. 1 dwg
