FIELD: metalworking. SUBSTANCE: method consists in ionic implantation of nitrogen with energy 30 keV at current density 43-50 mvA/sq.cm and fluence 5•1016 ion/sq.cm followed by postimplantation annealing at 540 C for 2 hr. According to invention, preliminarily, ionic implantation of argon ions with energy 15 keV is performed at current density 60 mcA/sq.cm for 1200-1800 sec, after which, without removal of part under treatment from operation chamber, ion-plasma purification by argon plasma ions with energy 300 eV is performed at current density 5-10 mA/sq.cm for 5000-6000 sec. EFFECT: improved working characteristics of parts.
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