SEMICONDUCTOR DEVICE WITH SYMMETRICAL VOLTAGE-CURRENT CHARACTERISTIC Russian patent published in 1996 - IPC

FIELD: symmetrical semiconductor voltage regulator diodes and diacs. SUBSTANCE: device is built around n-n⁺ epitaxial structure mounting two cells connected in parallel opposition and provided with longitudinal p-n-p-n thyristor structure whose p-n collector junction is shorted out by circuit of series-connected Zener diodes. Novelty is that it has rather wide n-base of p-n-p-n structure providing for elimination of clamping effect inherent to thyristor. On selecting total breakdown voltage of Zener diode circuit below boundary voltage of composite n-p-n transistor of thyristor structure, device gas voltage-current characteristic of symmetrical Zener diode. On selecting total breakdown voltage in Zener diode circuit higher than boundary voltage of composite n-p-n transistor of thyristor structure, voltage-current characteristic of device is that of diac. EFFECT: improved design, enlarged functional capabilities. 5 dwg