FIELD: semiconductor materials, in particular, investigation of surface potential, width of prohibition region, doping concentration in surface layers. SUBSTANCE: device has vacuum chamber which contains stage with heater. In addition device has unit which records emitted electrons, serial circuit of infrared light source, condenser, first monochrome converter, first converging lens, which is located in vacuum chamber. In addition device has serial circuit of ultraviolet light source, second monochrome converter, and second converging lens which is located in vacuum chamber. Axes of monochrome converters intersect at surface of stage and are in range of 30-90 with respect to stage. EFFECT: increased functional capabilities. 3 dwg
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Authors
Dates
1997-10-27—Published
1994-01-28—Filed