FIELD: semiconductor technology. SUBSTANCE: process of rejection of semiconductor structures includes formation of contacts to semi-insulating backing and active conductive layer, application of voltage to contact on backing with reference to contact on active layer, registration of change of conductance of active layer. For provision of capability of nondestructive testing and of increase of its graphicality change of conductance of active layer emerging as a result of application of voltage to contacts is determined by change of conductance of the whole structure by feeding SHF radiation to structure of conductance of the whole structure by feeding SHF radiation to structure and by measurement of reflected (absorbed) SHF power of structure. For these purposes contact to active layer is made pressure one and for contact with backing electrolyte transparent to SHF radiation is used. EFFECT: increased efficiency of nondestructive testing. 4 dwg
