FIELD: semiconductor equipment; can be used in manufacture of single and multicell photodetector devices. SUBSTANCE: the method consists in application of a succession of layers onto the substrate of semi-insulating gallium arsenide. A tunnel-thin stop-layer AlAs, 2 to 5 nm thick, is applied between the conducting layer closest to the substrate and the multilayer periodic structure. Etching is performed at a temperature of 20 to 22 C in a solution additionally containing organic acid. Used as organic acid is tartaric acid at the following relations of components, mass percent: tartaric acid - 35 to 45, hydrogen peroxide - 5 to 10, water - the rest, or lactic acid at the following relations of components, mass percent: lactic acid - 25 to 33, hydrogen peroxide - 5 to 10, water - the rest. EFFECT: facilitated procedure. 3 cl, 2 dwg
