ION BEAM FORMATION METHOD AND DEVICE INTENDED FOR ITS REALIZATION Russian patent published in 1997 - IPC

Abstract RU 2096856 C1

FIELD: ion beam formation technology. SUBSTANCE: targets are subjected to effect of fluxes of secondary electrons simultaneously with laser radiation. To form ion beam, secondary emission electrode adjacent to target is used. This electrode forms electron flux directed to target. It is made as disc with holes. EFFECT: improved ion beam formation process. 2 cl, 1 dwg

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RU 2 096 856 C1

Authors

Mashkovtsev B.N.

Dates

1997-11-20—Published

1995-12-29—Filed