FIELD: manufacture of thin-film silicon solar elements, photosensitive materials for optical sensors and thin-film transistors for large-sized displays. SUBSTANCE: process of deposition of films of hydrogenized silicon consists in supply of working gas from source into vacuum chamber for creation of supersonic stream of silicon-carrying gases which is passed through electron beam plasma for formation of impurity of neutral radicals of silicon for deposition of film on surface of substrate placed into stream of low-pressure gas. EFFECT: enhanced efficiency of process. 3 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PERFORMING HOMOGENEOUS AND HETEROGENEOUS REACTIONS BY MEANS OF PLASMA | 2002 |
|
RU2200058C1 |
| METHOD OF OBTAINING AGENT SELECTED FROM SERIES OF REFRACTORY METALS OR FROM SERIES OF NONMETALS: BORON, PHOSPHORUS, ARSENIC, SULFUR | 2005 |
|
RU2298588C2 |
| METHOD OF APPLICATION OF AMORPHOUS SILICON FILMS AND DEVICE FOR REALIZATION OF THIS METHOD | 2000 |
|
RU2188878C2 |
| METHOD OF PRODUCING AMORPHOUS SILICON FILMS CONTAINING NANOCRYSTALLINE INCLUSIONS | 2012 |
|
RU2536775C2 |
| METHOD OF FORMING AMORPHOUS SILICON THIN FILMS | 2016 |
|
RU2650381C1 |
| METHOD FOR PRODUCTION OF RE-EMITTING TEXTURED THIN FILMS BASED ON AMORPHOUS HYDROGENATED SILICON WITH SILICON NANOCRYSTALS | 2015 |
|
RU2619446C1 |
| METHOD FOR INCREASING EFFICIENCY OF DOPING AND CHANGING CONDUCTIVITY TYPE OF AMORPHOUS HYDROGENATED SILICON SLIGHTLY DOPED WITH ACCEPTOR IMPURITIES | 2016 |
|
RU2660220C2 |
| METHOD FOR PRODUCING NANOCRYSTALLINE SILICON/AMORPHOUS HYDROGENATED SILICON HETEROJUNCTION FOR SOLAR ELEMENTS AND SOLAR ELEMENT WITH SUCH HETEROJUNCTION | 2016 |
|
RU2667689C2 |
| METHOD FOR PREPARING PHOTOACTIVE MULTILAYER HETEROSTRUCTURE OF MICROCRYSTALLINE SILICONE | 2013 |
|
RU2599769C2 |
| METHOD OF DEPOSITION OF AMORPHOUS SILICON FILMS AND DEVICE FOR ITS EMBODIMENT | 1999 |
|
RU2165476C2 |
