METHOD FOR PREPARING PHOTOACTIVE MULTILAYER HETEROSTRUCTURE OF MICROCRYSTALLINE SILICONE Russian patent published in 2016 - IPC H01L31/18 B82B3/00 

FIELD: chemistry.

SUBSTANCE: invention refers to technology of nano- and microelectronic and nanophotonic devices. Substance of the invention consists in preparing a multilayer photoactive heterostructure of solid-coupled, sequentially deposited hydrogenised layers of microcrystalline silicone µc-Si:H(i) and silicone dioxide µc-SiO₂(n), µc-SiO₂(p) by hot-leg plasma-chemical deposition not exceeding 180°C, on borosilicate glass substrates, whereon a binding layer of a thickness of no more than 100 nm of transparent conductive oxide, e.g. ZnO is applied by HF-magnetron deposition for improving adhesion and reducing a defect density in the microcrystalline n-i-p heterostructure.

EFFECT: growing a thin-film structure with a uniform thickness and low-defect layers of hydrogenised microcrystalline silicone and silicone dioxide of n-, i-, p- conductivity types on the borosilicate glass substrate of greater area.