METHOD OF APPLICATION OF AMORPHOUS SILICON FILMS AND DEVICE FOR REALIZATION OF THIS METHOD Russian patent published in 2002 - IPC

FIELD: process of obtaining amorphous silicon films. SUBSTANCE: proposed method is based on deposition of decomposition products of silane-containing gaseous mixtures of preheated substrate. Decomposition of gas mixture is effected in highfrequency discharge plasma outside deposition chamber followed by forming supersonic jets flowing to vacuum deposition chamber through system of supersonic nozzles mounted in wall of chamber and so position relative to each other that supersonic jets intersect at distance of about 69% of distance between substrate and nozzles. Device proposed for realization of this method includes vacuum deposition chamber with substrate located inside it, system for delivery of gas mixture and extraction of reaction products as well as unit for generation of active plasma from silane-containing gaseous mixture. Active plasma generation unit is located outside deposition chamber and is connected with this chamber through system of nozzles mounted in wall of deposition chamber which is simultaneously wall of active plasma generation unit. Active plasma generation unit is made in form of electronic unit connected to high- frequency generator containing discharge chamber connected with silane-containing mixture source through pipe union which is simultaneously first electrode; membrane with nozzles found in it performs function of second electrode and is simultaneously used as well of discharge chamber and deposition chamber. EFFECT: simplified procedure of obtaining films; increased productivity due to possibility of applying films of homogeneous thickness, density and composition over extensive surfaces. 3 cl, 3 dwg