METHOD OF DEPOSITION OF AMORPHOUS SILICON FILMS AND DEVICE FOR ITS EMBODIMENT Russian patent published in 2001 - IPC

FIELD: technology of production of amorphous silicon films; applicable in modern optoelectronics and integrated optics for production of thin-film solar cells and transistor matrixes of large areas for liquid-crystal displays. SUBSTANCE: method of application of amorphous silicon film by deposition on hot substrate in process of decomposition of silane-containing gas mixture, decomposition of gas mixture is carried out in corona discharge initiated in vacuum chamber at ends of hollow needles of matrix needle electrode through which silane-containing mixture is supplied to chamber. Device for claimed method embodiment has vacuum chamber with system of active gas supply and withdrawal of reaction products, substrate located in vacuum chamber and electrode block with needle electrodes. The latter is made in the form of matrix installed in vacuum chamber wall which is used as the second electrode. Electrodes are hollow. EFFECT: simplified technology of production of films of amorphous silicon, higher productivity in mass production due to deposition of film uniform in thickness, density and composition on areas of unlimited sizes. 3 dwg, 1 ex