FIELD: microelectronics, manufacture of thin-film patterns with the aid of laser beam. SUBSTANCE: process includes pulse radiation of substrate, formation of atmosphere of vapors of compound decomposed by beam close to substrate surface. Beam is projected on substrate in the form of movable light spot. During period of pulses spot is moved over substrate to distance which is at least half as much as size of spot in direction of movement. Layers having thickness of order of units of monolayers can be deposited additionally by selection of vapor pressure and temperature of substrate. It is suggested to scan beam in direction transverse to movement of light spot in order to increase sharpness of edges of light spot within its boundaries. EFFECT: increased efficiency and productivity of process. 2 cl, 1 dwg
