METHOD FOR ATOMIC LAYER GROWING OF THIN FILMS OF CHEMICAL COMPOUNDS ON SUBSTRATES Russian patent published in 2013 - IPC C23C16/48 

FIELD: chemistry.

SUBSTANCE: stream of inert carrier gas with a first volatile reagent is fed into a reaction zone; a monomolecular layer of molecules of the first volatile reagent is formed on the substrate in gaseous phase. Pulse-periodic laser exposure is then carried out with pulse repetition period which is sufficient for self-cooling of the exposed zone and for formation of a monomolecular layer on the substrate. Pulse-periodic exposure is carried out while heating the substrate with absorbed radiation to chemisorption temperature of the absorbed molecules of the first volatile reagent. Non-adsorbed molecules of the first volatile reagent are then removed by a gas stream containing an inert carrier gas and a second volatile reagent. A monomolecular layer is formed from molecules of the second volatile reagent. Said pulse-periodic laser exposure is repeated until reaching temperature of chemical reaction of said reagents in the monomolecular layers to form a monomolecular layer of molecules of a chemical compound in form of a thin film. Non-adsorbed molecules and unreacted reagents are then removed. The two volatile reagents used can be pairs of a pyrolytically decomposable chemical compound which are fed into a stream of inert gas, wherein laser exposure is carried out while facilitating thermal decomposition of molecules of the reagents.

EFFECT: obtaining films with an improved structure and improved electrical and mechanical parameters - high electric strength and low internal mechanical stress.

2 cl, 3 dwg, 1 ex