FIELD: semiconductor equipment. SUBSTANCE: method involves calibration of single crystal, making main and additional cuts, splitting of single crystal into plates. Single crystal is calibrated for diameter which is greater than diameter of plates by at least 2 mm. Length of cuts L is equal to l D / d, where l is length of cut on plate, D is diameter of calibrated single crystal, d is diameter of plates. After single crystal is cut into plates, later are centered with respect to main cut and additional calibration is performed in order to achieve given diameter of plates. EFFECT: facilitated mechanical processing, increased good-to-bad ratio for manufacturing of plates within diameter tolerance range of 0.3 mm. 1 tbl, 2 dwg
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