METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURES Russian patent published in 1995 - IPC

FIELD: semiconductor engineering. SUBSTANCE: method for producing semiconductor structures involves mechanical premachining of plates to obtain main cuts, direct connection of plates with alignment of like-polarity crystal directions along main cuts, and mechanical treatment of joined plates to desired thickness. In the course of premachining, additional mark is made on periphery of plates accurate to its crystal direction equal to main cut manufacturing accuracy which is taken into account when aligning plates. Upon connection, round structure of diameter making up maximum 95% of diameter of joined plates is cut coaxially with plates and main cut is made in parallel to cuts of joined plates. Additional marks on periphery of joined plates are made of depth not greater than diameter of cut structure. Cut or slot is used as mark. EFFECT: facilitated procedure. 3 cl, 1 tbl