METHOD OF FLOATING-ZONE REFINING BY TEMPERATURE GRADIENT OF SILICON WAFERS BASED ON ALUMINUM ZONES Russian patent published in 1998 - IPC

FIELD: semiconductor technology; applicable in manufacture of integrated circuits and semiconductor devices. SUBSTANCE: method includes recrystallization in nonstationary thermal fields of two-five gradient heaters by successive motion of silicon wafers from one heater to another without their switching off. In this case, one-two heaters raise the temperature up to 700-1200 C and the other heaters reduce the temperature down to 1000 Cl wafers are changed on adjacent heaters with their similar temperatures. Heaters temperature is recovered in the absence of silicon wafers. Duration of operation cycle of each heater is determined by mathematic dependence. EFFECT: higher efficiency. 5 dwg, 2 tbl