METHOD FOR MAKING GUIDE-ZONE WINDOW IN LASER HETEROSTRUCTURE ON THE BASE OF A*993B*995 compounds and solid solutions thereof Russian patent published in 1995 - IPC

Abstract RU 2032776 C1

FIELD: technology of semiconductor instruments. SUBSTANCE: method involves preparing linear zones in silicon oxide mask on laser heterostructure n-n-n-p-p forming a liquid linear zone based on lead or bismuth between backing of gallium arsenide and heterostructure, and conducting zone recrystallization. In 1.5-2 hours' time the direction of temperature gradient is changed and wide-zone sections are formed in the region of linear zones. Then resonators Fabri-Pero with wide-zone windows are formed along planes (011). EFFECT: higher efficiency. 5 dwg

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RU 2 032 776 C1

Authors

Lunin L.S.

Pak G.T.

Kobjakova M.Sh.

Sysoev I.A.

Dates

1995-04-10Published

1992-04-03Filed