FIELD: technology of semiconductor instruments. SUBSTANCE: method involves preparing linear zones in silicon oxide mask on laser heterostructure n-n-n-p-p forming a liquid linear zone based on lead or bismuth between backing of gallium arsenide and heterostructure, and conducting zone recrystallization. In 1.5-2 hours' time the direction of temperature gradient is changed and wide-zone sections are formed in the region of linear zones. Then resonators Fabri-Pero with wide-zone windows are formed along planes (011). EFFECT: higher efficiency. 5 dwg
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Authors
Dates
1995-04-10—Published
1992-04-03—Filed