PROCESS OF MOLECULAR-BEAM EPITAXY Russian patent published in 1995 - IPC

Abstract RU 2038646 C1

FIELD: microelectronics. SUBSTANCE: process of molecular epitaxy includes manufacture of source of specified shape from plate of monocrystalline doped silicon. Then source is heated by passing of electric current through it up to temperature of sublimation of material on working side of source and epitaxial growth of doped layer from generated vapor phase on to substrate. In process of manufacture of source monocrystalline layer is formed and simultaneously doped with specified dopant on working surface of plate by method of zone recrystallization. The latter is formed and doped at temperature of maximum of solubility of doping impurity in silicon. In addition monocrystalline layer is doped simultaneously with several specified impurities. EFFECT: improved manufacturing process. 3 cl, 2 tbl

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RU 2 038 646 C1

Authors

Shengurov V.G.

Lozovskij S.V.

Knjazev S.Ju.

Shabanov V.N.

Dates

1995-06-27—Published

1991-07-18—Filed